Key Features
- Capacity: 500GB
- Form Factor: M.2 (2280)
- Flash Type: Samsung V-NAND 3-bit MLC
- Interface: PCIe Gen 3.0 x4, NVMe 1.3
- Sequential R/W: SEQUENTIAL READ Up to 3,500 MB/s
SEQUENTIAL WRITE Up to 3,200 MB/s - MTBF; 1.5 Million Hours Reliability
Temperature
- Operating Temperature: 0 – 70 ℃
- Shock resistance: 1,500 G & 0.5 ms (Half sine)
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